NTE5827

Silicon Power Rectifier Diode, 50 Amp

Description: TheNTE5826thruNTE5829aresiliconpowerrectifierdiodesinapress–fittypepackagedesignedforuseinallmedium–currentapplicationsorforhighercurrentindustrialalternatorsandchassismountedpowersupplyrectifiers. Features: ●50Amp@TC=+150°C ●600

PN5827

SmallSignalTransistors

SmallSignalTransistors TO-92Case(Continued)

PT5827

16-A12-VInputAdjustableIntegratedSwitchingRegulator

REFD5827

Petaluma(MAXREFDES30#):8-ChannelSimultaneous-SamplingAnalogFrontEnd

SZ5827

5.0WATT6.8-270VOLTSZENERDIODES

TAS5827

TAS582747-WStereo,DigitalInput,HighEfficiencyClosed-LoopClass-DAmplifierwithClass-HAlgorithm

1Features •Supportsmultipleoutputconfigurations –2×57-W,BTLMode(6-Ω,25-V,THD+N=10) –2×55-W,BTLMode(4-Ω,21-V,THD+N=10) –2×47-W,BTLMode(6-Ω,25-V,THD+N=1) –2×45-W,BTLMode(4-Ω,21-V,THD+N=1) –1×112-W,PBTLMode(3-Ω,25-V, THD+N=10) –1×94-W,PBTLMode(3-Ω,

TAS5827RHBR

TAS582747-WStereo,DigitalInput,HighEfficiencyClosed-LoopClass-DAmplifierwithClass-HAlgorithm

1Features •Supportsmultipleoutputconfigurations –2×57-W,BTLMode(6-Ω,25-V,THD+N=10) –2×55-W,BTLMode(4-Ω,21-V,THD+N=10) –2×47-W,BTLMode(6-Ω,25-V,THD+N=1) –2×45-W,BTLMode(4-Ω,21-V,THD+N=1) –1×112-W,PBTLMode(3-Ω,25-V, THD+N=10) –1×94-W,PBTLMode(3-Ω,

UZ5827

POWERZENERS

DESCRIPTION Fused-in-glass,metallurgically-bonded5wattzeners. FEATURES •2TimesGreaterSurgeRatingthanConventional10WattZeners •SmallPhysicalSize

UZ5827

POWERZENERS5WATT

POWERZENERS5WATT AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber.

UZ5827

POWERZENERS

DESCRIPTION Fused-in-glass,metallurgically-bonded5wattzeners. FEATURES •2TimesGreaterSurgeRatingthanConventional10WattZeners •SmallPhysicalSize