TRIAC - 100VRM, 2.5A

Description: The NTE5650 through NTE5653 sensitive gate TRIACs are designed to be driven directly with IC and MOS devices. These devices features a void–free glass passivated chip and are hermetically sealed in TO–5 outline cans. The NTE5650 through NTE5653 are bi–directional triode thyristo

文件：20.04 Kbytes 页数：2 Pages

NTE

TRIAC - 100VRM, 2.5A

Description: The NTE5650 through NTE5653 sensitive gate TRIACs are designed to be driven directly with IC and MOS devices. These devices features a void–free glass passivated chip and are hermetically sealed in TO–5 outline cans. The NTE5650 through NTE5653 are bi–directional triode thyristo

文件：20.04 Kbytes 页数：2 Pages

NTE

TRIAC - 800mA Sensitive Gate

Description: The NTE5655 through NTE5657 are 800mA sensitive gate TRIACs in a TO92 type package designed to be driven directly with IC and MOS devices. These TRIACs feature void–free glass passivated chips. These NTE devices are bi–directional triode thyristors and may be switched from off–state

文件：19.33 Kbytes 页数：2 Pages

NTE

TRIAC - 800mA Sensitive Gate

Description: The NTE5655 through NTE5657 are 800mA sensitive gate TRIACs in a TO92 type package designed to be driven directly with IC and MOS devices. These TRIACs feature void–free glass passivated chips. These NTE devices are bi–directional triode thyristors and may be switched from off–state

文件：19.33 Kbytes 页数：2 Pages

NTE

TRIACs

Description:\nThe NTE5655 through NTE5657 are 800mA sensitive gate TRIACs in a TO92 type package designed to be driven directly with IC and MOS devices. These TRIACs feature void–free glass passivated chips.These NTE devices are bi–directional triode thyristors and may be switched from off–state to

NTE

TRIACs

NTE

TRIACs

NTE