Silicon NPN Transistor High Gain, Low Noise Amp

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NTE

Silicon NPN Transistor RF Power Output

Description: The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application as a high–power linear amplifier from 2.0 to 30MHz. Features: • Specified 12.5V, 30MHz Characteristics: Output Power = 100W (PEP) Minimum Gain = 10dB Efficie

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NTE

Silicon NPN Transistor RF Power Output PO = 100W @ 30MHz

Description: The NTE471 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes state–of–the–art diffused emitter ballasting for improved ruggedness and reliability. Features: • Better than 15dB Gain at 30MHz and 100W (CW/PEP)

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NTE

Silicon NPN Transistor RF Power Output PO = 1.8W @ 175MHz

Description: The NTE472 is a silicon NPN transistor designed for amplifier, frequency multiplier or oscillator applications in military, mobile marine and citizens band equipment. Suitable for use as output driver or pre–driver stages in VHF and UHF equipment. Features: • Specified 12.5

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NTE

Silicon NPN Transistor RF Power Driver

Description: The NTE473 is a silicon NPN transistor in a TO39 type package designed for amplifier and oscillator applications in military and industrial equipment. Suitable for use as output, driver or predriver stages in VHF equipment. Features: • Specified 175MHz, 28V Characteristics:

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NTE

Silicon NPN Transistor RF Power Output

Description: The NTE475 is an NPN silicon annular RF power transistor, optimized for large–scale power–amplifier and driver applications to 300MHz.

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NTE

Silicon NPN Transistor RF Power Output

Description: The NTE476 is a silicon epitaxial NPN–planar transistor which employs a multi–emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters result in high RF current handling capability, high power gain, low base resista

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NTE

Silicon NPN Transistor RF Power Output

Description: The NTE477 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Features: • High power gain: Gpe ≥ 8.2dB @ VCC = 13.5V; VO = 40W; t = 175MHz • Emitter ballasted construction and gold metallization for h

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NTE

Silicon NPN Transistor RF Power Output, PO = 100W @ 175MHz

Description: The NTE478 is a 12.5 Volt epitaxial silicon NPN planar transistor designed primarily for VHF communications. This device utilizes diffused emitter resistors to achieve infinite VSWR under operating conditions, and is internally input matched to optimize power gain and efficiency ov

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NTE

Bi-Polar transistor Selector Guide

NTE