NTE47

Silicon NPN Transistor High Gain, Low Noise Amp

NTE470

Silicon NPN Transistor RF Power Output

Description: TheNTE470isasiliconNPNRFtransistorinaW52typepackagedesignedprimarilyforapplicationasahigh–powerlinearamplifierfrom2.0to30MHz. Features: •Specified12.5V,30MHzCharacteristics: OutputPower=100W(PEP) MinimumGain=10dB Efficie

NTE471

Silicon NPN Transistor RF Power Output PO = 100W @ 30MHz

Description: TheNTE471isa28VepitaxialsiliconNPNplanartransistordesignedprimarilyforSSBcommunications.Thisdeviceutilizesstate–of–the–artdiffusedemitterballastingforimprovedruggednessandreliability. Features: •Betterthan15dBGainat30MHzand100W(CW/PEP)

NTE472

Silicon NPN Transistor RF Power Output PO = 1.8W @ 175MHz

Description: TheNTE472isasiliconNPNtransistordesignedforamplifier,frequencymultiplieroroscillatorapplicationsinmilitary,mobilemarineandcitizensbandequipment.Suitableforuseasoutputdriverorpre–driverstagesinVHFandUHFequipment. Features: •Specified12.5

NTE473

Silicon NPN Transistor RF Power Driver

Description: TheNTE473isasiliconNPNtransistorinaTO39typepackagedesignedforamplifierandoscillatorapplicationsinmilitaryandindustrialequipment.Suitableforuseasoutput,driverorpredriverstagesinVHFequipment. Features: •Specified175MHz,28VCharacteristics:

NTE475

Silicon NPN Transistor RF Power Output

Description: TheNTE475isanNPNsiliconannularRFpowertransistor,optimizedforlarge–scalepower–amplifieranddriverapplicationsto300MHz.

NTE476

Silicon NPN Transistor RF Power Output

Description: TheNTE476isasiliconepitaxialNPN–planartransistorwhichemploysamulti–emitterelectrodedesign.ThisfeaturetogetherwithaheavilydiffusedbasematrixlocatedbetweentheindividualemittersresultinhighRFcurrenthandlingcapability,highpowergain,lowbaseresista

NTE477

Silicon NPN Transistor RF Power Output

Description: TheNTE477isasiliconNPNepitaxialplanartypetransistordesignedforRFpoweramplifiersinVHFbandmobileradioapplications. Features: •Highpowergain:Gpe≥8.2dB@VCC=13.5V;VO=40W;t=175MHz •Emitterballastedconstructionandgoldmetallizationforh

NTE478

Silicon NPN Transistor RF Power Output, PO = 100W @ 175MHz

Description: TheNTE478isa12.5VoltepitaxialsiliconNPNplanartransistordesignedprimarilyforVHFcommunications.ThisdeviceutilizesdiffusedemitterresistorstoachieveinfiniteVSWRunderoperatingconditions,andisinternallyinputmatchedtooptimizepowergainandefficiencyov