Silicon NPN Transistor RF Power Output (PO = 6W, 175MHz)

Description: The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: ● High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz) ● Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 1

文件：21.92 Kbytes 页数：2 Pages

NTE

Low Cost, Low Power, Rail-to-Rail OPERATIONAL AMPLIFIERS MicroAmplifier ??Series

文件：234.16 Kbytes 页数：10 Pages

BURR-BROWN

Low-Cost, Low-Power, Rail-to-Rail OPERATIONAL AMPLIFIERS MicroAmplifier ??Series

文件：322.38 Kbytes 页数：13 Pages

BURR-BROWN

Low-Cost, Low-Power, Rail-to-Rail OPERATIONAL AMPLIFIERS

文件：879.73 Kbytes 页数：15 Pages

TI

德州仪器