NTE342中文资料NTE数据手册PDF规格书
NTE342规格书详情
Description:
The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications.
Features:
● High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)
● Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 6W, f = 175MHz
产品属性
- 型号：
NTE342
- 制造商：
NTE Electronics
- 功能描述：
TRANSISTOR NPN SILICON 35V IC=2A PO=6W 175MHZ RF POWER OUTPUR
- 功能描述：
Bulk
- 功能描述：
RF PWR 130-175MHz 7W
- 功能描述：
Trans GP BJT NPN 17V 2A 3-Pin(3+Tab)
