Silicon Complementary Transistors Audio Power Amp, Switch

Description: The NTE331 (NPN) and NTE332 (PNP) are silicon epitaxial–base complementary power transistors in a TO–220 plastic package intended for use in power linear and switching applications.

文件：21.41 Kbytes 页数：2 Pages

NTE

Complementary Transistors

NTE

Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch

Features: • High Input Impedance • High Speed • Low Saturation Voltage • Enhancement Mode Applications: • High Power Switching • Motor Control

文件：18.86 Kbytes 页数：2 Pages

NTE

Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch

Features: • High Input Impedance • High Speed • Low Saturation Voltage • Enhancement Mode Applications: • High Power Switching • Motor Control

文件：18.84 Kbytes 页数：2 Pages

NTE

Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch

Features: • High Input Impedance • High Speed • Low Saturation Voltage • Enhancement Mode Applications: • High Power Switching • Motor Control

文件：18.84 Kbytes 页数：2 Pages

NTE

IGBTs

Features:\n• High Input Impedance\n• High Speed\n• Low Saturation Voltage\n• Enhancement ModeApplications:\n• High Power Switching\n• Motor Control

NTE

Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch

Features:\n• High Input Impedance\n• High Speed\n• Low Saturation Voltage\n• Enhancement ModeApplications:\n• High Power Switching\n• Motor Control

NTE