Integrated Thyristor/Rectifier (ITR) TV Horizontal Deflection & Commutating Switch

Integrated Thyristor/Rectifier (ITR) TV Horizontal Deflection & Commutating Switch

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NTE

Gate Turn-Off SCRs

The NTE308 and NTE310 series integrated thyristor/rectifiers are all-diffused power monolithic circuits that incorporate a silicon controlled rectifier and a silicon rectifier on a common pellet. The NTE308 series types are used as bipolar switches to control horizontal yoke current during the beam

NTE

Optoisolator NPN Transistor Output

Description: The NTE3040 is a gallium arsenide, infrared emitting diode in a 6–Lead DIP type package coupled with a silicon phototransistor.

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NTE

Optoisolator NPN Darlington Transistor Output

Description: The NTE3982 consists of a gallium arsenide infrared emitting diode coupled with a silicon Darlington connected transistor in a low cost plastic package with lead spacing compatible with dual–in–line packages.

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NTE

Optoisolator NPN Darlington Transistor Output

Description: The NTE3083 contains a gallium arsenide infrared emitter optically coupled to a silicon planer photo–darlington in a 6–Lead DIP type package. Features: • High Sensitivity: 1mA on the Input will Sink a TTL gate • High Isolation: 3550VDC, 1012Ω, 0.5pF

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NTE

Optoisolater NPN Photo Darlington Output

Features: ● High Isolation Voltage–7500V

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NTE

Optoisolator Photon Coupled Bilateral Analog FET

Description: The NTE3085 consists of a gallium arsenide infrared emitting diode coupled to a symmetrical silicon photo detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion–free control of low AC and DC analog signals.

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NTE

Optoisolator Dual NPN Transistor Output

Description: The NTE3086 is a standard dual optocoupler consisting of a GaAs Infrared LED and a silicon phototransistor per channel. This device is constructed with a high voltage insulation, double molded packaging process which offers 7.5KV withstand test capability. Features: ● Two isolated

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NTE

Optoisolator High Speed, Open Collector, NAND Gate Output

Description: The NTE3087 is an optoisolator which combines a GaAsP LED as the emitter and an integrated high gain multi–stage high speed photodetector. The output of the detector circuit is an open collector, Schottky clamped transistor capable of sinking 50mA. The open collector output provide

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NTE

Optoisolator Silicon NPN High Voltage Phototransistor Output

Description: The NTE3088 is a gallium arsenide LED optically coupled to a high voltge, silicon phototransistor in a 6–Lead DIP type package designed for applications requiring high voltage output. This device is particularly useful in copy machines and solid state relays. Features: High

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NTE