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TLV2365

TLVx36550-MHz,Zerø-Crossover,HighCMRR,RRIO,OperationalAmplifier

1Features •Gainbandwidth:50MHz •Zerø-crossoverdistortiontopology: –CMRR:115dB(typical) –Rail-to-railinputandoutput •Input100mVbeyondsupplyrail •Noise:4.5nV/√Hz •Slewrate:27V/μs •Fastsettling:0.2μsto0.01% •Precision: –OffsetDrift:2μV/°C(max) –

TITexas Instruments

德州仪器美国德州仪器公司

TLV2365

TLVx365-Q1Automotive,50MHz,Zero-Crossover,Low-Distortion,High-CMRR,RRI/O,Single-SupplyOperationalAmplifiers

1Features •AEC-Q100qualified –Temperaturegrade1:–40°Cto+125°C •Gainbandwidth:50MHz •Zero-crossoverdistortiontopology: –CMRR:115dB(typical) –Rail-to-railinputandoutput •Input100mVbeyondsupplyrail •Noise:4.5nV/√Hz •Slewrate:27V/μs •Fastsettling:0.2μsto0

TITexas Instruments

德州仪器美国德州仪器公司

TLV2365DGKR

TLVx36550MHz,Zero-Crossover,High-CMRR,RRIOOperationalAmplifiers

1Features •Gainbandwidth:50MHz •Zero-crossoverdistortiontopology: –CMRR:115dB(typical) –Rail-to-railinputandoutput •Input100mVbeyondsupplyrail •Noise:4.5nV/√Hz •Slewrate:27V/μs •Fastsettling:0.2μsto0.01% •Precision: –Offsetdrift:2μV/°C(maximum) –In

TITexas Instruments

德州仪器美国德州仪器公司

TLV2365DR

TLVx36550MHz,Zero-Crossover,High-CMRR,RRIOOperationalAmplifiers

1Features •Gainbandwidth:50MHz •Zero-crossoverdistortiontopology: –CMRR:115dB(typical) –Rail-to-railinputandoutput •Input100mVbeyondsupplyrail •Noise:4.5nV/√Hz •Slewrate:27V/μs •Fastsettling:0.2μsto0.01% •Precision: –Offsetdrift:2μV/°C(maximum) –In

TITexas Instruments

德州仪器美国德州仪器公司

TLV2365DR

TLVx36550-MHz,Zerø-Crossover,High-CMRR,RRIOOperationalAmplifiers

1Features •Gainbandwidth:50MHz •Zerø-crossoverdistortiontopology: –CMRR:115dB(typical) –Rail-to-railinputandoutput •Input100mVbeyondsupplyrail •Noise:4.5nV/√Hz •Slewrate:27V/μs •Fastsettling:0.2μsto0.01% •Precision: –Offsetdrift:2μV/°C(maximum

TITexas Instruments

德州仪器美国德州仪器公司

TZ2365C

CrystalUnitSMD2.0x1.648.0MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage MoistureSensitivityLevel(MSL):Level-1 DescriptionandApplications: Surfacemount2.0mmx1.6mmcrystalunitforuseinwireless

TAI-SAW

TAI-SAW TECHNOLOGY CO., LTD.

TZ2365D

CrystalUnitSMD2.0x1.648.0MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage AEC-Q200compliance MoistureSensitivityLevel(MSL):Level-1 DescriptionandApplications: Surfacemount2.0mmx1.6mmcrystaluni

TAI-SAW

TAI-SAW TECHNOLOGY CO., LTD.

W2365

AdvancedDesignSystem(ADS)WirelessLibraries

KEYSIGHTKeysight Technologies

是德科技是德科技(中国)有限公司

XC2365

16/32-BitSingle-ChipMicrocontrollerwith32-BitPerformance

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

XC2365

16/32-BitSingle-ChipMicrocontrollerwith32-BitPerformance

GeneralDeviceInformation TheXC236xderivativesarehigh-performancemembersoftheInfineonXC2000Familyoffullfeaturedsingle-chipCMOSmicrocontrollers.ThesedevicesextendthefunctionalityandperformanceoftheC166Familyintermsofinstructions(MACunit),peripherals,andspeed.T

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

详细参数

  • 型号:

    NTE2365

  • 制造商:

    NTE Electronics

  • 功能描述:

    TRANSISTOR NPN SILICON 1500V IC=12A TF=0.2US HIGH VOLTAGE HORIZONTAL DEFLECTION

  • 功能描述:

    BIPOLAR TRANSISTOR NPN 800V

  • 功能描述:

    T-NPN-SI HORIZ OUTPUT

  • 功能描述:

    BIPOLAR TRANSISTOR, NPN, 800V; Transistor

  • Polarity:

    NPN; Collector Emitter Voltage

  • V(br)ceo:

    800V; Power Dissipation

  • Pd:

    180W; DC Collector

  • Current:

    15A; DC Current Gain

  • hFE:

    8; Operating Temperature

  • Min:

    -55C; No. of

  • Pins:

    3 ;RoHS

  • Compliant:

    Yes

  • 功能描述:

    Trans GP BJT NPN 800V 15A 3-Pin(3+Tab)

  • 功能描述:

    Trans GP BJT NPN 800V 15A 3-Pin(3+Tab) TO-3P

供应商型号品牌批号封装库存备注价格
5
全新原装 货期两周
询价
2022+
1
全新原装 货期两周
询价
NTE
23+
TO264
39275
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
24+
N/A
82000
一级代理-主营优势-实惠价格-不悔选择
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NTE
23+
65480
询价
NTE ELECTRONICS
24+
con
10000
查现货到京北通宇商城
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更多NTE2365供应商 更新时间2025-6-13 16:06:00