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ATTINY2313A-SU

8-bitMicrocontrollerwith2/4KBytesIn-SystemProgrammableFlash

Overview TheATtiny2313A/4313isalow-powerCMOS8-bitmicrocontrollerbasedontheAVRenhancedRISCarchitecture.Byexecutingpowerfulinstructionsinasingleclockcycle,theATtiny2313A/4313achievesthroughputsapproaching1MIPSperMHzallowingthesystemdesignertooptimizepowercons

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

ATTINY2313V

8-bitMicrocontrollerwith2KBytesIn-SystemProgrammableFlash

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

ATTINY2313V

8-bitMicrocontrollerwith2KBytesIn-SystemProgrammableFlash

TheATtiny2313isalow-powerCMOS8-bitmicrocontrollerbasedontheAVRenhancedRISCarchitecture.Byexecutingpowerfulinstructionsinasingleclockcycle,theATtiny2313achievesthroughputsapproaching1MIPSperMHzallowingthesystemdesignertooptimizepowerconsumptionversusprocess

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

ATTINY2313V

AVR??High-performanceandLow-powerRISCArchitecture

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

BT2313M

6AFour-quadranttriacs

Generaldescription Passivatedtriacsinafullpack,plasticpackageintendedforuseinapplicationsrequiringhighbidirectionaltransientandblockingvoltagecapabilityandthermalcyclingperformance. Featuresandbenefits ■Isolatedpackage ■HighITSM Applications ■Lampdimmers ■H

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

CAS-2313

FixedDomeIPNetworkCamera

LVL1

Level One

CAS-2313

VarifocalDomeIPNetworkCamera

LVL1

Level One

CAS-2313

FixedDomeIPNetworkCamera

LVL1

Level One

CAS-2313

PanoramicDomeIPNetworkCamera

LVL1

Level One

CEH2313

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-4.6A,RDS(ON)=60mΩ@VGS=-10V. RDS(ON)=90mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TSOP-6package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CES2313

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-3.6A,RDS(ON)=60mΩ@VGS=-10V. RDS(ON)=90mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CES2313A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-3.8A,RDS(ON)=55mΩ@VGS=-10V. RDS(ON)=86mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CHM2313PT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT3.6Ampere FEATURE *Smallflatpackage.(SC-59) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOCHENMKO

CHENMKO

CHM2313QPT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT4.6Ampere FEATURE *Smallflatpackage.(SC-74/SOT-457) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplicatio

CHENMKOCHENMKO

CHENMKO

CM2313

T-13/4Bi-PinBase(.125)

T-13/4Bi-PinBase(.125)

CMLCML

CML

CY2313ANZ

13Output,3.3VSDRAMBufferforDesktopPCswith3DIMMs

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

CY2313ANZ

13Output,3.3VSDRAMBufferforDesktopPCswith3DIMMs

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

EUA2313

6-WStereoClass-DAudioPowerAmplifierwithSpeakerProtection

EUTECHEutech Microelectronics Inc

德信科技德信科技股份有限公司

EUA2313B

6-WStereoClass-DAudioPowerAmplifierwithSpeakerProtection

EUTECHEutech Microelectronics Inc

德信科技德信科技股份有限公司

FA2313U

MATCHEDPAIRANDQUADASSEMBLIESDIODES

ETC1List of Unclassifed Manufacturers

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详细参数

  • 型号:

    NTE2313

  • 制造商:

    NTE Electronics

供应商型号品牌批号封装库存备注价格
23+
N/A
88000
一级代理放心采购
询价
5
全新原装 货期两周
询价
2022+
1
全新原装 货期两周
询价
NTE
-3
39265
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
NTE
24+
DIP14
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
NTE
23+
65480
询价
NTE
24+25+/26+27+
TO-3-3
2368
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
更多NTE2313供应商 更新时间2024-6-6 11:36:00