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NTE2313

Silicon NPN Transistor High Speed Switch

Description: TheNTE2313isahigh–voltage,high–speed,glass–passivatedNPNpowertransistorinaTO220typepackagedesignedforuseinconverters,inverters,switchingregulators,motorcontrolsystems,andswitchingapplications.

NTE

NTE Electronics, Inc

2313-RC

HighCurrentToroidInductors

BournsBourns Inc.

伯恩斯(邦士)

2313-RC

HighCurrentToroidInductorsHorizontalorverticalmount

BournsBourns Inc.

伯恩斯(邦士)

2313-RC

HighCurrentToroidInductors

BournsBourns Inc.

伯恩斯(邦士)

2313-RC

HighCurrentToroidInductors

BournsBourns Inc.

伯恩斯(邦士)

2313-RC

HighCurrentToroidInductors

BournsBourns Inc.

伯恩斯(邦士)

AM2313

MOSFETP-CHANNELENHANCEMENTMODE

DESCRIPTION TheAM2313isavailableinSOT-23Spackage. FEATURES -18V/3A, RDS(ON)=120mΩ(MAX)@VGS=-4.5V. RDS(ON)=150mΩ(MAX)@VGS=-2.5V. SuperHighdensecelldesignforextremelylowRDS(ON). ReliableandRugged. AvailableinSOT-23SPackage APPLICATION PowerManag

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

AM2313P

P-ChannelLogicLevelMOSFET

TheseminiaturesurfacemountMOSFETsutilizeHighCellDensityprocess.LowrDS(on)assuresminimalpowerlossandconservesenergy,makingthisdeviceidealforuseinpowermanagementcircuitry.Typicalapplicationsarevoltagecontrolsmallsignalswitch,powermanagementinportableandbatte

AnalogPower

Analog Power

AP2313GN-HF

SimpleDriveRequirement,SmallPackageOutline

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

APM2313

P-ChannelEnhancementModeMOSFET

Features •-20V/-1.8A,RDS(ON)=108mΩ(typ.)@VGS=-4.5V RDS(ON)=135mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesignforExtremely LowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComputer,PortableEquip

ANPECAnpec Electronics Corp

茂达电子

APM2313A

P-ChannelEnhancementModeMOSFET

Features •-20V/-1.8A,RDS(ON)=108mΩ(typ.)@VGS=-4.5V RDS(ON)=135mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesignforExtremely LowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComputer,PortableEquip

ANPECAnpec Electronics Corp

茂达电子

APM2313AC-TR

P-ChannelEnhancementModeMOSFET

Features •-20V/-1.8A,RDS(ON)=108mΩ(typ.)@VGS=-4.5V RDS(ON)=135mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesignforExtremely LowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComputer,PortableEquip

ANPECAnpec Electronics Corp

茂达电子

ATTINY2313

8-bitAVRMicrocontrollerwith2KBytesIn-SystemProgrammableFlash

TheATtiny2313isalow-powerCMOS8-bitmicrocontrollerbasedontheAVRenhancedRISCarchitecture.Byexecutingpowerfulinstructionsinasingleclockcycle,theATtiny2313achievesthroughputsapproaching1MIPSperMHzallowingthesystemdesignertooptimizepowerconsumptionversusprocess

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

ATTINY2313

8-bitMicrocontrollerwith2KBytesIn-SystemProgrammableFlash

TheATtiny2313isalow-powerCMOS8-bitmicrocontrollerbasedontheAVRenhancedRISCarchitecture.Byexecutingpowerfulinstructionsinasingleclockcycle,theATtiny2313achievesthroughputsapproaching1MIPSperMHzallowingthesystemdesignertooptimizepowerconsumptionversusprocess

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

ATTINY2313

8-bitMicrocontrollerwith2KBytesIn-SystemProgrammableFlash

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

ATTINY2313

DataandNon-volatileProgramandDataMemories

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

ATTINY2313A

8-bitMicrocontrollerwith2/4KBytesIn-SystemProgrammableFlash

Overview TheATtiny2313A/4313isalow-powerCMOS8-bitmicrocontrollerbasedontheAVRenhancedRISCarchitecture.Byexecutingpowerfulinstructionsinasingleclockcycle,theATtiny2313A/4313achievesthroughputsapproaching1MIPSperMHzallowingthesystemdesignertooptimizepowercons

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

ATTINY2313A-MMH

8-bitMicrocontrollerwith2/4KBytesIn-SystemProgrammableFlash

Overview TheATtiny2313A/4313isalow-powerCMOS8-bitmicrocontrollerbasedontheAVRenhancedRISCarchitecture.Byexecutingpowerfulinstructionsinasingleclockcycle,theATtiny2313A/4313achievesthroughputsapproaching1MIPSperMHzallowingthesystemdesignertooptimizepowercons

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

ATTINY2313A-MU

8-bitMicrocontrollerwith2/4KBytesIn-SystemProgrammableFlash

Overview TheATtiny2313A/4313isalow-powerCMOS8-bitmicrocontrollerbasedontheAVRenhancedRISCarchitecture.Byexecutingpowerfulinstructionsinasingleclockcycle,theATtiny2313A/4313achievesthroughputsapproaching1MIPSperMHzallowingthesystemdesignertooptimizepowercons

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

ATTINY2313A-PU

8-bitMicrocontrollerwith2/4KBytesIn-SystemProgrammableFlash

Overview TheATtiny2313A/4313isalow-powerCMOS8-bitmicrocontrollerbasedontheAVRenhancedRISCarchitecture.Byexecutingpowerfulinstructionsinasingleclockcycle,theATtiny2313A/4313achievesthroughputsapproaching1MIPSperMHzallowingthesystemdesignertooptimizepowercons

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

详细参数

  • 型号:

    NTE2313

  • 制造商:

    NTE Electronics

供应商型号品牌批号封装库存备注价格
5
全新原装 货期两周
询价
2022+
1
全新原装 货期两周
询价
NTE
-3
39265
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
NTE
24+
DIP14
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
NTE
23+
65480
询价
NTE
24+25+/26+27+
TO-3-3
2368
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
NTE
23+
TO-3PL
18000
询价
更多NTE2313供应商 更新时间2024-5-16 16:06:00