Integrated Circuit Dual Audio Power Amplifier, 5.8W/Ch

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Operating Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V DC Supply Voltage . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . 26V Peak Supply Voltage (Note 1) . .

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NTE

RF & MICROWAVE TRANSISTORS 850-960 MHz APPLICATIONS

. 850 - 960 MHZ . 24 VOLTS . COMMON EMITTER . OVERLAY GEOMETRY . GOLD METALLIZATION . POUT = 6.0 W MIN. WITH 10.0 dB GAIN

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STMICROELECTRONICS

意法半导体

Inductance 9.30 mH

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RHOMBUS-IND

N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING

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UTC

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