isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 150A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 15mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

MOSFET - N-Channel Shielded Gate PowerTrench 150 V, 15 m, 50 A

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ONSEMI

安森美半导体

N-channel Enhancement Mode Power MOSFET

Features  VDS= 150V, ID= 50 A RDS(ON)

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Bychip

百域芯

MOSFET - N-Channel Shielded Gate PowerTrench 150 V, 15 m, 50 A

文件：148.72 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 50 A, 15 mΩ

This N-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • Shielded Gate MOSFET Technology\n• Superior Switching Performance\n• Max rDS(on) = 15 mΩ at VGS = 10 V, ID = 27 A\n• Low conduction Loss\n•100% UIL tested\n• Robust Technology\n•RoHS Compliant;

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安森美半导体