isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 94mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N-Channel MOSFET uses advanced trench technology

文件：674.91 Kbytes 页数：5 Pages

DOINGTER

杜因特

Power MOSFET 12 A, 60 V

文件：76.61 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Power MOSFET 12 A, 60 V, N?묬hannel DPAK / IPAK

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ONSEMI

安森美半导体

Single N-Channel Power MOSFET 60V, 12A, 94mΩ

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. • Lower RDS(on)\n• Lower VDS(on)\n• Lower and Tighter VSD\n• Lower Diode Reverse Recovery Time\n• Lower Reverse Recovery Stored Charge\n• RoHS Compliant;

ONSEMI

安森美半导体

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

文件：636.34 Kbytes 页数：5 Pages

BYCHIP

百域芯

Power MOSFET 12 A, 60 V

文件：76.61 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Power MOSFET 12 A, 60 V

文件：76.61 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Power MOSFET 12 A, 60 V, N?묬hannel DPAK / IPAK

文件：135.47 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

N-Channel 60 V (D-S) MOSFET

文件：960.09 Kbytes 页数：7 Pages

VBSEMI

微碧半导体