Silicon Carbide (SiC) MOSFET – EliteSiC, 13mohm, 1200V, M3S, Die

Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits inc

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Silicon Carbide (SiC) MOSFET – EliteSiC, 13 mohm, 1200 V, M3S, Die

The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive. • Excellent FOM [ = Rdson * Eoss ]\n• Ultra Low Gate Charge (QG(tot) = 254 nC)\n• High Speed Switching with Low Capacitance (Coss = 262 pF)\n• 15V to 18V Gate Drive\n• New M3S technology: 13 mohm RDS(ON) with low Eon and Eoff losses\n• 100% Avalanche Tested\n• Halide Free and RoHS Compliant\n• D;

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