NTB150N65S3HF

功率 MOSFET，N 沟道，SUPERFET® III，FRFET®，650 V，24 A，150 mΩ，D2PAK; • 700 V @ TJ = 150 °C\n• Higher system reliability at low temperature operation\n• Ultra Low Gate Charge (Typ. Qg = 43 nC)\n• Lower switching loss\n• Low Effective Output Capacitance (Typ. Coss(eff.) = 400 pF)\n• Lower switching loss\n• Excellent body diode performance (low Qrr, robust body diode)\n• Higher system reliability in LLC and Phase shift full bridge circuit\n• Optimized Capacitance\n• Lower peak Vds and lower Vgs oscillation\n• RoHS Compliant\n• 100% Avalanche Tested\n• Typ. RDS(on) = 121 mΩ\n;

SUPERFET III MOSFET is ON Semiconductor’s brand−new high\nvoltage super−junction (SJ) MOSFET family that is utilizing charge\nbalance technology for outstanding low on−resistance and lower gate\ncharge performance. This advanced technology is tailored to minimize\nconduction loss, provide superior switching performance, and\nwithstand extreme dv/dt rate.\nConsequently, SUPERFET III MOSFET is very suitable for the\nvarious power systems for miniaturization and higher efficiency.\nSUPERFET III FRFET MOSFET’s optimized reverse recovery\nperformance of body diode can remove additional component and\nimprove system reliability.

NTB150N65S3HF

丝印：NTB150N65S3HF；Package：D2PAK；MOSFET ??N?륝hannel, SUPERFET III, FRFET

NTMT150N65S3HF

MOSFET-Power,N-Channel,SUPERFETIII,FRFET

NTP150N65S3HF

MOSFET??Power,N-Channel,SUPERFETIII,FRFET650V,24A,150m

NTPF150N65S3HF

MOSFET??Power,N-Channel,SUPERFETIII,FRFET650V,24A,150m