256Mb Synchronous DRAM

[Nanya] Description The NT5SV64M4AT, NT5SV32M8AT, and NT5SV16M16AT are four-bank Synchronous DRAMs organized as 16Mbit x 4 I/O x 4 Bank, 8Mbit x 8 I/O x 4 Bank, and 4Mbit x 16 I/O x 4 Bank, respectively. These synchronous devices achieve high-speed data transfer rates of up to 133MHz by em

文件：817.62 Kbytes 页数：65 Pages

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256Mb Synchronous DRAM

[Nanya] Description The NT5SV64M4AT, NT5SV32M8AT, and NT5SV16M16AT are four-bank Synchronous DRAMs organized as 16Mbit x 4 I/O x 4 Bank, 8Mbit x 8 I/O x 4 Bank, and 4Mbit x 16 I/O x 4 Bank, respectively. These synchronous devices achieve high-speed data transfer rates of up to 133MHz by em

文件：817.62 Kbytes 页数：65 Pages

ETCList of Unclassifed Manufacturers

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256Mb Synchronous DRAM

[Nanya] Description The NT5SV64M4AT, NT5SV32M8AT, and NT5SV16M16AT are four-bank Synchronous DRAMs organized as 16Mbit x 4 I/O x 4 Bank, 8Mbit x 8 I/O x 4 Bank, and 4Mbit x 16 I/O x 4 Bank, respectively. These synchronous devices achieve high-speed data transfer rates of up to 133MHz by em

文件：817.62 Kbytes 页数：65 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

256Mb Synchronous DRAM

[Nanya] Description The NT5SV64M4AT, NT5SV32M8AT, and NT5SV16M16AT are four-bank Synchronous DRAMs organized as 16Mbit x 4 I/O x 4 Bank, 8Mbit x 8 I/O x 4 Bank, and 4Mbit x 16 I/O x 4 Bank, respectively. These synchronous devices achieve high-speed data transfer rates of up to 133MHz by em

文件：817.62 Kbytes 页数：65 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

256Mb Synchronous DRAM

[Nanya] Description The NT5SV64M4AT, NT5SV32M8AT, and NT5SV16M16AT are four-bank Synchronous DRAMs organized as 16Mbit x 4 I/O x 4 Bank, 8Mbit x 8 I/O x 4 Bank, and 4Mbit x 16 I/O x 4 Bank, respectively. These synchronous devices achieve high-speed data transfer rates of up to 133MHz by em

文件：817.62 Kbytes 页数：65 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

256Mb Synchronous DRAM

[Nanya] Description The NT5SV64M4AT, NT5SV32M8AT, and NT5SV16M16AT are four-bank Synchronous DRAMs organized as 16Mbit x 4 I/O x 4 Bank, 8Mbit x 8 I/O x 4 Bank, and 4Mbit x 16 I/O x 4 Bank, respectively. These synchronous devices achieve high-speed data transfer rates of up to 133MHz by em

文件：817.62 Kbytes 页数：65 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

256Mb Synchronous DRAM

[Nanya] Description The NT5SV64M4AT, NT5SV32M8AT, and NT5SV16M16AT are four-bank Synchronous DRAMs organized as 16Mbit x 4 I/O x 4 Bank, 8Mbit x 8 I/O x 4 Bank, and 4Mbit x 16 I/O x 4 Bank, respectively. These synchronous devices achieve high-speed data transfer rates of up to 133MHz by em

文件：817.62 Kbytes 页数：65 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

256Mb Synchronous DRAM

Description\nThe NT5SV64M4AT, NT5SV32M8AT, and NT5SV16M16AT are four-bank Synchronous DRAMs organized as 16Mbit x 4 I/O x 4 Bank, 8Mbit x 8 I/O x 4 Bank, and 4Mbit x 16 I/O x 4 Bank, respectively. These synchronous devices achieve high-speed data transfer rates of up to 133MHz by employing a pipelin • High Performance: (TABLE)\n• Single Pulsed RAS Interface\n• Fully Synchronous to Positive Clock Edge\n• Four Banks controlled by BA0/BA1 (Bank Select)\n• Programmable CAS Latency: 2, 3\n• Programmable Burst Length: 1, 2, 4, 8\n• Programmable Wrap: Sequential or Interleave\n• Multiple Burst Read wi;

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