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NT5DS64M4CT

256Mb DDR Synchronous DRAM

Description NT5DS64M4CT, NT5DS32M8CT and NT5DS16M16CT, NT5DS64M4CS, NT5DS32M8CS and NT5DS16M16CS are 256Mb SDRAM devices based using a DDR interface. They are all based on Nanya’s 110 nm design process. The 256Mb DDR SDRAM uses a double-data-rate architecture to achieve high-speed operation.

文件:2.68082 Mbytes 页数:76 Pages

NANOAMP

NT5DS64M4CT-5T

256Mb DDR Synchronous DRAM

Description NT5DS64M4CT, NT5DS32M8CT and NT5DS16M16CT, NT5DS64M4CS, NT5DS32M8CS and NT5DS16M16CS are 256Mb SDRAM devices based using a DDR interface. They are all based on Nanya’s 110 nm design process. The 256Mb DDR SDRAM uses a double-data-rate architecture to achieve high-speed operation.

文件:2.68082 Mbytes 页数:76 Pages

NANOAMP

NT5DS64M4CT-6K

256Mb DDR Synchronous DRAM

Description NT5DS64M4CT, NT5DS32M8CT and NT5DS16M16CT, NT5DS64M4CS, NT5DS32M8CS and NT5DS16M16CS are 256Mb SDRAM devices based using a DDR interface. They are all based on Nanya’s 110 nm design process. The 256Mb DDR SDRAM uses a double-data-rate architecture to achieve high-speed operation.

文件:2.68082 Mbytes 页数:76 Pages

NANOAMP

NT5DS64M4AT

256Mb DDR333/300 SDRAM

[Nanya] Description The 256Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM. Features • Double data rate architecture: two data transfers per clock cycle • Bidirectional data strobe (DQS) is transmitte

文件:269.29 Kbytes 页数:27 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

NT5DS64M4AT

256Mb Double Data Rate SDRAM

[Nanya] Description The 256Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM. Features • Double data rate architecture: two data transfers per clock cycle • Bidirectional data strobe (DQS) is transmitte

文件:1.55712 Mbytes 页数:78 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

NT5DS64M4AW

256Mb Double Data Rate SDRAM

[Nanya] Description The 256Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM. Features • Double data rate architecture: two data transfers per clock cycle • Bidirectional data strobe (DQS) is transmitte

文件:1.55712 Mbytes 页数:78 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

详细参数

  • 型号:

    NT5DS64M4CT

  • 制造商:

    NANOAMP

  • 制造商全称:

    NANOAMP

  • 功能描述:

    256Mb DDR Synchronous DRAM

供应商型号品牌批号封装库存备注价格
NANYA
2447
FBGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
NANYA
2023+环保现货
FBGA
20971
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
NANYA/南亚
23+
FBGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
NANYA/南亚
22+
BGA
5660
现货,原厂原装假一罚十!
询价
NANYA/南亚
23+
BGA
89630
当天发货全新原装现货
询价
NANYA/南亚
08+PBF
BGA
217
原装现货
询价
NANYA
24+
BGA
23
询价
NANYA
23+
TSOP
8650
受权代理!全新原装现货特价热卖!
询价
NANYA
05+
TSOP
3
普通
询价
NANYA
21+
TSOP
1523
公司现货,不止网上数量!原装正品,假一赔十!
询价
更多NT5DS64M4CT供应商 更新时间2025-12-1 15:02:00