NT1GD64S8HB0FM中文资料1GB, 512MB and 256MB 200 pin Unbuffered DDR SO-DIMM Based on DDR333 512Mb bit B Die device数据手册Nanya规格书

描述 Description

NT1GD64S8HB0FM, NT512D64SH8B0GM, NT256D64SH4B0GM, NT1GD64S8HB0FN, NT512D64SH8B0GN, and NT256D64SH4B0GN are un-buffered 200-Pin Double Data Rate (DDR) Synchronous DRAM Small Outline Dual In-Line Memory Module (SO-DIMM). All devices on these modules are based on Nanya’s 110nm die B generation of 512M bit devices. NT1GD64S8HB0FN, NT512D64SH8B0GN and NT256D64SH4B0GN are the corresponding part numbers that are in “Green” packaging and they are identical in both physical and electrical characteristics as non-green parts.Features
• 200-Pin Small Outline Dual In-Line Memory Module (SO-DIMM)
• Unbuffered DDR SO-DIMM based on 110nm 512M bit die B device, organized as 64Mx8 and 32Mx16 DDR SDRAM
• Intended for 166 MHz applications
• Inputs and outputs are SSTL-2 compatible
• VDD = VDDQ = 2.5V ± 0.2V
• SDRAMs have 4 internal banks for concurrent operation
• Differential clock inputs
• Data is read or written on both clock edges
• DRAM DLL aligns DQ and DQS transitions with clock transitions.
• Address and control signals are fully synchronous to positive clock edge

应用 Application

• Inputs and outputs are SSTL-2 compatible
• SDRAMs have 4 internal banks for concurrent operation
• Data is read or written on both clock edges
• Address and control signals are fully synchronous to positive clock edge