RF Transistor for Low Noise Amplifier

文件：139.33 Kbytes 页数：10 Pages

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安森美半导体

丝印：ZD；Package：SOT-623；RF Transistor for Low Noise Amplifier

文件：139.33 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

用于低噪声放大器的射频晶体管

This RF transistor is designed for RF amplifier applications. SSFP package is contribute to down size of application because it is small surface mount package. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications. • High cut-off frequency : fT = 5.5 GHz typ. (VCE = 5 V)\n• Aveirable for high frequency application\n• High gain: |S21e|2 = 11 dB typ. (f = 1 GHz): |S21e|2 = 19 dB typ. (f = 400 MHz)\n• Useful for the reception of the small signal\n• SSFP package is pin-compatible with SOT-623\n• Reduce PCB mount a;

ONSEMI

安森美半导体

Package：SOT-623F；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF-TR 10V 70MA FT=5.5GHZ

ONSEMI

安森美半导体