NSVBCP69T1G分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF中文资料

NSVBCP69T1G属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由安森美半导体公司制造生产的NSVBCP69T1G晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。

PNP Silicon Epitaxial Transistor

This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications.

特性 Features

• High Current: IC = −1.0 A

• The SOT−223 Package Can Be Soldered Using Wave or Reflow.

• SOT−223 package ensures level mounting, resulting in improved

thermal conduction, and allows visual inspection of soldered joints.

The formed leads absorb thermal stress during soldering, eliminating

the possibility of damage to the die.

• NPN Complement is BCP68

• AEC−Q101 Qualified and PPAP Capable

• NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant