NSVBAT54SWT1G分立半导体产品的二极管-整流器-阵列规格书PDF中文资料

NSVBAT54SWT1G属于分立半导体产品的二极管-整流器-阵列。由安森美半导体制造生产的NSVBAT54SWT1G二极管 - 整流器 - 阵列二极管和整流器阵列系列中的产品可在单个封装内包含两个或多个分立二极管。其特征表述类似于单个分立二极管，并增加了“二极管配置”属性，该属性指示设备中二极管之间任何内部连接的存在情况和特性。请注意，具有全桥配置的阵列被专门排除在外，并列为单独的产品系列。

These Schottky barrier diodes are designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

特性 Features

• Extremely Fast Switching Speed

• Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc

• NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant