40 V, 5.0 A, Low VCE(sat) NPN Transistor

文件：109.91 Kbytes 页数：5 Pages

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安森美半导体

低 VCE(sat) 晶体管，NPN，40 V，5.0 A

ON Semiconductor e2 PowerEdge family of Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energ • High Current, Low VCE(sat), ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)\n• Improved Circuit Efficiency, Decreased Battery Charge Time, Reduce component count, High Frequency Switching, Smaller Portable Product, No distortion;

ONSEMI

安森美半导体

40 V, 5.0 A, Low VCE(sat) NPN Transistor

文件：109.91 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

40 V, 5.0 A, Low VCE(sat) NPN Transistor

文件：109.91 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

NPN Transistor

文件：109.91 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

40 V, 7.0 A, Low VCE(sat) NPN Transistor

文件：84.86 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Package：3-WDFN 裸露焊盘；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 40V 5A 3WDFN

ONSEMI

安森美半导体