订购数量 | 价格 |
---|---|
1+ |
首页>NSS40302PDR2G>芯片详情
NSS40302PDR2G_ONSEMI/安森美半导体_两极晶体管 - BJT COMP NPN/PNP LO VCE 40V 6A芯球通科技
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
NSS40302PDR2G
- 功能描述:
两极晶体管 - BJT COMP NPN/PNP LO VCE 40V 6A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
PNP 集电极—基极电压
- VCBO:
集电极—发射极最大电压
- VCEO:
- 40 V 发射极 - 基极电压
- VEBO:
- 6 V
- 增益带宽产品fT:
直流集电极/Base Gain hfe
- Min:
100 A
- 安装风格:
SMD/SMT
- 封装/箱体:
PowerFLAT 2 x 2
供应商
相近型号
- NSS40300MZ4T3G
- NSS60101DMR6T1G
- NSS40300MZ4T1G
- NSS60200LT1G
- NSS40300MZ4T
- NSS60201LT1G
- NSS40300MDR2G
- NSS60600MZ4T1G
- NSS40201LT1G
- NSS60600MZ4T3G
- NSS40200UW6T1G
- NSS60601MZ4
- NSS60601MZ4T1G
- NSS40200LT1G
- NSS60601MZ4T3G
- NSS35200MR6T1G
- NSSW020AT1
- NSS30201MR6T1G
- NSSW020BT-P1
- NSS30101LT1G
- NSSW100DT
- NSSW109T
- NSS30100LT1G
- NSSW123BT-HD
- NSS30071MR6T1G
- NSSW146ATIC
- NSSW157T
- NSS30070MR6T1G
- NSSW206CT
- NSS20501UW3T2G
- NSSW208ATE
- NSS20500UW3T2G
- NST1001-QDNR
- NST1001-QTZB
- NSS20300MR6T1G
- NST112C-CWLR
- NSS20201MR6T1G
- NST112-DSTR
- NST175H-QMSR
- NSS20201LT1G
- NST175H-QSPR
- NSS20201L
- NST235-DSCR
- NSS20200LT1G
- NST235-DSTR
- NSS20101JT1G
- NST30010MXV6T1G
- NSS1C301ET4G
- NST3904DP6T5G
- NSS1C300ET4G