订购数量 | 价格 |
---|---|
1+ |
首页>NSS20201MR6T1G>详情
NSS20201MR6T1G_ONSEMI/安森美半导体_两极晶体管 - BJT 2A 20V Low VCEsat河锋鑫商城
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
NSS20201MR6T1G
- 功能描述:
两极晶体管 - BJT 2A 20V Low VCEsat
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
PNP 集电极—基极电压
- VCBO:
集电极—发射极最大电压
- VCEO:
- 40 V 发射极 - 基极电压
- VEBO:
- 6 V
- 增益带宽产品fT:
直流集电极/Base Gain hfe
- Min:
100 A
- 安装风格:
SMD/SMT
- 封装/箱体:
PowerFLAT 2 x 2
供应商
- 企业:
深圳市河锋鑫科技有限公司
- 商铺:
- 联系人:
杨小姐
- 手机:
13430590551
- 询价:
- 电话:
0755-23933424
- 地址:
深圳市福田区华强北街道福强社区华强北路1078号现代之窗A座、B座A座9D
相近型号
- NSS30071MR6T1G
- NSS1C300ET4G
- NSS30100LT1G
- NSS1C201MZ4T3G
- NSS30101LT1G
- NSS1C201MZ4T1G
- NSS30201MR6T1G
- NSS35200MR6T1G
- NSS1C201LT1G
- NSS1C200MZ4T3G
- NSS40200LT1G
- NSS1C200MZ4T1G
- NSS40200UW6T1G
- NSS1C200LT1G
- NSS40201LT1G
- NSS12601CF8T1G
- NSS40300MDR2G
- NSS12201LT1G
- NSS40300MZ4T
- NSS40300MZ4T1G
- NSS12200LT1G
- NSS40300MZ4T3G
- NSS12100XV6T1G
- NSS40301MDR2G
- NSS12100XV6
- NSS40301MZ4
- NSS12100UW3TCG
- NSS40301MZ4T1G
- NSS40301MZ4T3G
- NSRLV20MW2T1G
- NSS40302PDR2G
- NSS40500UW3T2G
- NSRLL30XV2T1G
- NSS40600CF8T1G
- NSRLL30T1G
- NSS507-212F
- NSR35050-QTOAR
- NSS524-012N-AABG1T
- NSR33201-QHSPR
- NSS60100DMTTBG
- NSR31050-QSTBR
- NSS60101DMR6T1G
- NSR31050-QSTAR
- NSS60200LT1G
- NSR30CM3T5G
- NSS60201LT1G
- NSR20F40NXT5G
- NSS60600MZ4T1G
- NSR20F30NXT5G
- NSS60600MZ4T3G