500 mA, 40 V Schottky Barrier Diode

文件：69.77 Kbytes 页数：5 Pages

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安森美半导体

500 mA, 40 V Schottky Barrier Diode

文件：69.77 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

肖特基势垒二极管，500 mA，40 V

These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications.They are housed in space saving micro-packaging ideal for space constraint applications. • Low Forward Voltage Drop - 580 mV (Typ.) @ IF = 500 mA\n• Low Reverse Current - 2.0 uA (Typ.) @ VR = 40 V\n• 500 mA of Continuous Forward Current\n• High ESD Rating: HBM - Class 3B; CDM - Class IV\n• High Switching Speed\n• These Devices are Pb-Free, Halogen Free/BFR Free and RoHS Compliant\n• Env;

ONSEMI

安森美半导体

Package：2-XDFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 40V 500MA X2DFN2

ONSEMI

安森美半导体

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：IC REG LINEAR

ONSEMI

安森美半导体