Schottky Barrier Diode, 500 mA, 30 V

These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications. They are housed in spacing saving micro−packaging ideal for space constraint applications. Features • Low Forward Voltage Drop − 410

文件：216.8 Kbytes 页数：6 Pages

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安森美半导体

Schottky Barrier Diode, 500 mA, 30 V

These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications. They are housed in spacing saving micro−packaging ideal for space constraint applications. Features • Low Forward Voltage Drop − 410

文件：216.8 Kbytes 页数：6 Pages

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安森美半导体

肖特基势垒整流器，500 mA，30 V

These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications.They are housed in space saving micro-packaging ideal for space constraint applications. • Low Forward Voltage Drop - 580 mV (Typ.) @ IF = 500 mA\n• High Efficiency\n• Low Reverse Current - 200 uA (Typ.) @ VR = 30 V\n• High Efficiency\n• 500 mA of Continuous Forward Current\n• High Current Capability\n• High ESD Rating: HBM - Class 3B; CDM - Class IV\n• ESD Robust\n• High Switching Spee;

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安森美半导体

Package：2-XDFN；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 30V 500MA X2DFN2

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安森美半导体

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：IC REG LINEAR

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安森美半导体