Trench-based Schottky Diode, 500 mA, 30 V

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500 mA, 30 V, Trench-based Schottky Diode in X4DFN2 (01005)

Schottky Diode optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications. They are housed in space saving micro-packaging ideal for space constrained applications. • Smallest Package Available (01005); 0.445mm x 0.24mm\n• Space savings\n• 500 mA of Continuous Forward Current\n• Low Forward Voltage Drop, VF = 430 mV (Typical) @ IF = 200 mA\n• Low Reverse Current,25 µA (Typical) @ VR = 30 V\n• Low trr = 9 ns Typical\n• Low Capacitance, 19 pF (Typical);

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安森美半导体

Trench-based Schottky Diode, 500 mA, 30 V

文件：169.9 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Package：01005（0402 公制）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：01005_TRENCH_SCHOTTKY_30V

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安森美半导体