NSR02L30

Schottky Barrier Diode

TheseSchottkybarrierdiodesareoptimizedforlowforward voltagedropandlowleakagecurrent.TheDSN2(DualSilicon No−lead)packageisachiplevelpackageusingsolderablemetal contactsunderthepackagesimilartoDFNstylepackages.TheDSN stylepackageenables100%utilization

NSR02L30NXT5G

Schottky Barrier Diode

TheseSchottkybarrierdiodesareoptimizedforlowforward voltagedropandlowleakagecurrent.TheDSN2(DualSilicon No−lead)packageisachiplevelpackageusingsolderablemetal contactsunderthepackagesimilartoDFNstylepackages.TheDSN stylepackageenables100%utilization

NSR02L30NXT5G

Schottky Barrier Diode, 200 mA, 30 V; • Very Low Forward Voltage Drop\n• Reduces Power Disspation\n• Low Reverse Current\n• Very High Switching Speed\n;

The Schottky diode is optimized for low forward voltage drop and low leakage current. The DSN2 Dual Silicon no lead package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN style package enables 100 percent utilization of the package area for active silicon offering a significant performance per board area advantage compared to products in plastic molded packages. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements.

NSR02L30NXT5G

Schottky Barrier Diode

NSR02L30NXT5G

Schottky Barrier Diode

NSR02L30NXT5G_10

Schottky Barrier Diode

NSR02L30NXT5G

Package：0201（0603 公制）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 30V 200MA 2DSN