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型号	下载订购	功能描述	制造商上传企业	LOGO
NSM2016	文件：3.63965 Mbytes Page：29 Pages	all-Effect-Based Current Sensor ICwithCommon-Mode Field Rejection and Overcurrentprotection Key Features  Highbandwidth and fastresponse time  380kHzbandwidth  1.5us response time  High-precision current measurement  Differentialhall sets can immune stray field  Highisolation levelthat meetsUL standards  Withstandisolation voltage (VISO): 3000Vrms  Maximum surge isolation wi 文件：3.63965 Mbytes 页数：29 Pages	NOVO 纳芯微电子	NOVO
NSM2016	文件：300 bytes Page：1 Pages	集成电流路径的芯片级电流传感器 NSM2016 系列是纳芯微推出的集成电流路径的芯片级电流传感器，其主要应用于对65A 以下的电流做隔离测量。 • 20A~65A多档电流量程可选\n• 交流/直流输入\n• ±2% 电流测量精度\n• 380KHz高带宽\n• 固定输出\n• SOP8封装：600VDC工作绝缘电压 / 3000 Vrms @ 1 min 耐受隔离电压\n• 4mm宽的爬电距离\n• -40~125℃宽的工作电压范围;	Novosense 纳芯微电子	Novosense
NSM2016-20B5F-DSPR	文件：3.63965 Mbytes Page：29 Pages	all-Effect-Based Current Sensor ICwithCommon-Mode Field Rejection and Overcurrentprotection Key Features  Highbandwidth and fastresponse time  380kHzbandwidth  1.5us response time  High-precision current measurement  Differentialhall sets can immune stray field  Highisolation levelthat meetsUL standards  Withstandisolation voltage (VISO): 3000Vrms  Maximum surge isolation wi 文件：3.63965 Mbytes 页数：29 Pages	NOVO 纳芯微电子	NOVO
NSM2016-20U5F-DSPR	文件：3.63965 Mbytes Page：29 Pages	all-Effect-Based Current Sensor ICwithCommon-Mode Field Rejection and Overcurrentprotection Key Features  Highbandwidth and fastresponse time  380kHzbandwidth  1.5us response time  High-precision current measurement  Differentialhall sets can immune stray field  Highisolation levelthat meetsUL standards  Withstandisolation voltage (VISO): 3000Vrms  Maximum surge isolation wi 文件：3.63965 Mbytes 页数：29 Pages	NOVO 纳芯微电子	NOVO
NSM2016-25B3F-DSPR	文件：3.63965 Mbytes Page：29 Pages	all-Effect-Based Current Sensor ICwithCommon-Mode Field Rejection and Overcurrentprotection Key Features  Highbandwidth and fastresponse time  380kHzbandwidth  1.5us response time  High-precision current measurement  Differentialhall sets can immune stray field  Highisolation levelthat meetsUL standards  Withstandisolation voltage (VISO): 3000Vrms  Maximum surge isolation wi 文件：3.63965 Mbytes 页数：29 Pages	NOVO 纳芯微电子	NOVO
NSM2016-30B3F-DSPR	文件：3.63965 Mbytes Page：29 Pages	all-Effect-Based Current Sensor ICwithCommon-Mode Field Rejection and Overcurrentprotection Key Features  Highbandwidth and fastresponse time  380kHzbandwidth  1.5us response time  High-precision current measurement  Differentialhall sets can immune stray field  Highisolation levelthat meetsUL standards  Withstandisolation voltage (VISO): 3000Vrms  Maximum surge isolation wi 文件：3.63965 Mbytes 页数：29 Pages	NOVO 纳芯微电子	NOVO
NSM2016-30U3F-DSPR	文件：3.63965 Mbytes Page：29 Pages	all-Effect-Based Current Sensor ICwithCommon-Mode Field Rejection and Overcurrentprotection Key Features  Highbandwidth and fastresponse time  380kHzbandwidth  1.5us response time  High-precision current measurement  Differentialhall sets can immune stray field  Highisolation levelthat meetsUL standards  Withstandisolation voltage (VISO): 3000Vrms  Maximum surge isolation wi 文件：3.63965 Mbytes 页数：29 Pages	NOVO 纳芯微电子	NOVO
NSM2016-45B5F-DSPR	文件：3.63965 Mbytes Page：29 Pages	all-Effect-Based Current Sensor ICwithCommon-Mode Field Rejection and Overcurrentprotection Key Features  Highbandwidth and fastresponse time  380kHzbandwidth  1.5us response time  High-precision current measurement  Differentialhall sets can immune stray field  Highisolation levelthat meetsUL standards  Withstandisolation voltage (VISO): 3000Vrms  Maximum surge isolation wi 文件：3.63965 Mbytes 页数：29 Pages	NOVO 纳芯微电子	NOVO
NSM2016-50B3F-DSPR	文件：3.63965 Mbytes Page：29 Pages	all-Effect-Based Current Sensor ICwithCommon-Mode Field Rejection and Overcurrentprotection Key Features  Highbandwidth and fastresponse time  380kHzbandwidth  1.5us response time  High-precision current measurement  Differentialhall sets can immune stray field  Highisolation levelthat meetsUL standards  Withstandisolation voltage (VISO): 3000Vrms  Maximum surge isolation wi 文件：3.63965 Mbytes 页数：29 Pages	NOVO 纳芯微电子	NOVO
NSM2016-50B5F-DSPR	文件：3.63965 Mbytes Page：29 Pages	all-Effect-Based Current Sensor ICwithCommon-Mode Field Rejection and Overcurrentprotection Key Features  Highbandwidth and fastresponse time  380kHzbandwidth  1.5us response time  High-precision current measurement  Differentialhall sets can immune stray field  Highisolation levelthat meetsUL standards  Withstandisolation voltage (VISO): 3000Vrms  Maximum surge isolation wi 文件：3.63965 Mbytes 页数：29 Pages	NOVO 纳芯微电子	NOVO

技术参数

源边电阻 (mΩ）：
1.2
介电强度（Vrms）：
3000
爬电距离(mm)：
4
工作电压(V)：
5
带宽 (KHz)：
380
响应时间 (us typ.)：
1.5
工作温度 (℃)：
-40~125
静态输出（V）：
2.5
灵敏度(mV/A)：
100
电流范围(A)：
±20
封装：
SOP8
应用等级：
Industrial

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市芯皇电子有限公司	NSM2016	NOVOSENSE/纳芯微	23+	SOIC-8	25000	专业配单,原装正品假一罚十,代理渠道价格优	询价
深圳市明嘉莱科技有限公司	NSM2016	NOVOSENSE/纳芯微	25+	SOIC-8	880000	明嘉莱只做原装正品现货	询价
亚泰电子科技有限公司	NSM2016-50U5F-DSPR	NOVOSENSE	22+	SMD	2500		询价
深圳市科恒伟业电子有限公司	NSM2016-15B5F-DSPR	NOVOSENSE	2450+	SOP-8	9850	只做原装正品现货或订货假一赔十!	询价
深圳市力拓辉电子有限公司	NSM2016-50U5F-DSPR	纳芯微电子	21+	SOIC8	100	只做原装鄙视假货15118075546	询价
万三科技(深圳)有限公司	NSM2019-100B5F3-DSWCR	Novosense(纳芯微)	25+	封装	500000	源自原厂成本,高价回收工厂呆滞	询价
深圳博中泰实业有限公司	NSM2019MC-DSWCR	NOVOSENSE/纳芯微	25+	SOW10	20000	本公司只做全新原装正品	询价
千层芯半导体(深圳)有限公司	NSM2-02000800-14-10P-GW-DB	L3 Narda-MITEQ	24+	专注军工级宇航级器件长期排单订	600		询价
贸泽芯城（深圳）电子科技有限公司	NSM2058M	JRS	23+	SOP	14950	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
上海市鑫鸿达电子	NSM-205FC	ICP	2022+		1	全新原装货期两周	询价

更多NSM2016供应商更新时间2026-7-28 9:35:00

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