RF SPDT Switch MMIC

Features • Broadband Frequency Range 0.1 to 8.5 GHz • Capable of 1.6 V Operation • Low Insertion Loss / High Isolation / Middle Power • Small and Thin−sized Package − 1.0 x 1.0 x 0.43 mm • Wettable Flank Package for Optimal Automated Optical Inspection (AOI) • NSV Prefix for Automotive and O

文件：230.33 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Package：6-PowerXFDFN；包装：托盘 类别：RF/IF，射频/中频和 RFID 射频开关 描述：RF SPDT SWITCH MMIC

ONSEMI

安森美半导体

Bipolar Transistor -100 V, -2.5 A, Low VCE(sat) PNP Single LFPAK

This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for automotive applications. AEC−Q101 qualified and PPAP capable. (NSVS1001CLTWG) Features • Complement to NSS1002CL • Large Current Capacitance • Low Collector to

文件：384.17 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Bipolar Transistor -100 V, -2.5 A, Low VCE(sat) PNP Single LFPAK

This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for automotive applications. AEC−Q101 qualified and PPAP capable. (NSVS1001CLTWG) Features • Complement to NSS1002CL • Large Current Capacitance • Low Collector to

文件：384.17 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

RF SPDT Switch MMIC

Features • Broadband Frequency Range 0.1 to 8.5 GHz • Capable of 1.6 V Operation • Low Insertion Loss / High Isolation / Middle Power • Small and Thin−sized Package − 1.0 x 1.0 x 0.43 mm • Wettable Flank Package for Optimal Automated Optical Inspection (AOI) • NSV Prefix for Automotive and O

文件：230.33 Kbytes 页数：6 Pages

ONSEMI

安森美半导体