丝印：NSF0312A0；Package：SOT8071-1；1200 V, 30 mΩ, N-channel SiC MOSFET

1. General description The NSF030120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in h

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NEXPERIA

安世

1200 V, 30 mΩ, N-channel SiC MOSFET

The NSF030120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage i • Excellent RDSon temperature stability\r\n• Very low switching losses\r\n• Fast reverse recovery\r\n• Fast switching speed\r\n• Temperature independent turn-off switching losses\r\n• Very fast and robust intrinsic body diode\r\n• Faster commutation and improved switching due to the additional Kelvi;

Nexperia

安世

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