NSBC114EDXV6分立半导体产品的晶体管-双极（BJT）-阵列-预偏置规格书PDF中文资料

NSBC114EDXV6属于分立半导体产品的晶体管-双极（BJT）-阵列-预偏置。由安森美半导体制造生产的NSBC114EDXV6晶体管 - 双极（BJT）- 阵列 - 预偏置预偏置的双极晶体管阵列包含两个或更多双极晶体管，同时电阻以可能有用的方式连接到每个晶体管；通常在每个晶体管的发射极和基极端子之间有一个电阻，同时有另一个电阻连接到每个晶体管的基极端子和器件封装上的用户可访问引脚。

Dual NPN Bias Resistor Transistors R1 = 10 kΩ, R2 = 10 kΩ

NPN Transistors with Monolithic Bias Resistor Network

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

特性 Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• S and NSV Prefix for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC-Q101 Qualified and PPAP Capable*

• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant