1.0 A, 40 V, Schottky Power Rectifier, Surface Mount

The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop-reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. W • Low Profile - Maximum Height of 1.1 mm\n• AEC-Q101 Qualified and PPAP Capable\n• Small Footprint - Footprint Area of 8.45 mm2\n• Low VF Provides Higher Efficiency and Extends Battery Life\n• Supplied in 12 mm Tape and Reel\n• Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathod;

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安森美半导体

Surface Mount Schottky Power Rectifier

文件：163.32 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

文件：163.32 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

ONSEMI

安森美半导体

肖特基二极管与整流器 SCHOTTKY RECT

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安森美半导体

Package：DO-216AA；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 40V 1A POWERMITE

ONSEMI

安森美半导体

Package：DO-216AA；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 40V 1A POWERMITE

ONSEMI

安森美半导体