NRVBA2H100T3G数据手册分立半导体产品的二极管-整流器-单规格书PDF

描述 Description

This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.

特性 Features

• Compact Package with J−Bend Leads Ideal for Automated Handling\r
• Highly Stable Oxide Passivated Junction\r
• Guard−Ring for Overvoltage Protection\r
• Low Forward Voltage Drop\r
• NBR and NRVB Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable*\r
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Mechanical Characteristics\r
• Case: Molded Epoxy\r
• Epoxy Meets UL 94 V−0 @ 0.125 in\r
• Weight: 70 mg (SMA), 95 mg (SMB) (Approximately)\r
• Cathode Polarity Band\r
• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds\r
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable\r
• ESD Ratings:\r
♦ Machine Model = C\r
♦ Human Body Model = 3B\r
• These Devices are Pb−Free and are RoHS Compliant\r
• Device Meets MSL1 Requirements\r

应用 Application

Power SuppliesFree Wheeling DiodesPolarity Protection Diodes
LED Lamps

简介

NRVBA2H100T3G属于分立半导体产品的二极管-整流器-单。由制造生产的NRVBA2H100T3G二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。