Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package

This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diod

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安森美半导体

Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package

This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diod

文件：204.63 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package

文件：120.85 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. • Compact Package with J−Bend Leads Ideal for Automated Handling\r\n• Highly Stable Oxide Passivated Junction\r\n• Guard−Ring for Overvoltage Protection\r\n• Low Forward Voltage Drop\r\n• NBR and NRVB Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirement;

ONSEMI

安森美半导体

Package：DO-214AC，SMA；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 100V 2A SMA

ONSEMI

安森美半导体