Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diod

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安森美半导体

Surface Mount Schottky Power Rectifier

文件：119.62 Kbytes 页数：5 Pages

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安森美半导体

Package：DO-214AC，SMA；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 2A 10V SMA2

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

文件：58.43 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switc

文件：46.67 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switc

文件：46.67 Kbytes 页数：8 Pages

ONSEMI

安森美半导体