| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NRVBA160 | Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol 文件：263.72 Kbytes 页数：5 Pages | ONSEMI 安森美半导体 | ONSEMI | |
NRVBA160 | Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol 文件：177.38 Kbytes 页数：5 Pages | ONSEMI 安森美半导体 | ONSEMI | |
Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol 文件：177.38 Kbytes 页数：5 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol 文件：263.72 Kbytes 页数：5 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol 文件：263.72 Kbytes 页数：5 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol 文件：177.38 Kbytes 页数：5 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol 文件：177.38 Kbytes 页数：5 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol 文件：263.72 Kbytes 页数：5 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol 文件：263.72 Kbytes 页数：5 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol 文件：177.38 Kbytes 页数：5 Pages | ONSEMI 安森美半导体 | ONSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
25+23+ |
SMA |
22764 |
绝对原装正品全新进口深圳现货 |
询价 | ||
三年内 |
1983 |
只做原装正品 |
询价 | ||||
ON |
20+ |
SMA |
36800 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
ON |
24+ |
SMA |
30980 |
原装现货/放心购买 |
询价 | ||
ON(安森美) |
2447 |
DO-214AC |
105000 |
5000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
ON |
25+ |
SMA |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ON |
21+ |
SMA |
3350 |
硬核芯力 只做原装 现货实单来谈 |
询价 | ||
ON/安森美 |
23+ |
DO-214AC |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ON |
24+ |
SMA |
66540 |
原装现货假一赔十 |
询价 |
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