首页 >NRVB1N5820G>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

1N5820

SCHOTTKYBARRIERRECTIFIERS3.0AMPERES20,30,40VOLTS

AxialLeadRectifiers ...employingtheSchottkyBarrierprincipleinalargeareametal–to–siliconpowerdiode.State–of–the–artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow–voltage,

MotorolaMotorola, Inc

摩托罗拉

1N5820

3AMPERESCHOTTKYBARRIERRECTIFIER(VOLTAGE-20to40VoltsCURRENT-3.0Amperes)

VOLTAGE20to40VoltsCURRENT3.0Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Foruseinlowvoltage,highfrequencyinverters,f

PANJITPANJIT International Inc.

强茂強茂股份有限公司

1N5820

LOWDROPPOWERSCHOTTKYRECTIFIER

DESCRIPTION AxialPowerSchottkyrectifiersuitedforSwitchModePowerSuppliesandhighfrequencyDCtoDCconverters.PackagedinDO-201ADthesedevicesareintendedforuseinlowvoltage,highfrequencyinverters,freewheeling,polarityprotectionandsmallbatterychargers. FEATURESANDB

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

1N5820

3AMPERESCHOTTKYBARRIERRECTIFIERSVOLTAGE-20to40VoltsCURRENT-3.0Ampere???

VOLTAGE-20to40VoltsCURRENT-3.0Ampere s

Surge

SURGE COMPONENTS

1N5820

3AMPERESCHOTTKYBARRIERRECTIFIER

TRSYS

Transys Electronics

1N5820

3.0AMP.SCHOTTKYBARRIERRECTIFIERS

JGDJinan Gude Electronic Device

济南固锝电子济南固锝电子器件有限公司

1N5820

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to40VoltsForwardCurrent-3.0Amperes FEATURES *TheplasticpackagecarriesUnderwritersLaboratoryFlammabilityClassification94V-0 *Metalsiliconjunction,majoritycarrierconduction *Guardringforovervoltageprotection *Lowpowerloss,highefficiency *Hig

ZOWIEZOWIE

智威智威科技股份有限公司

1N5820

SCHOTTKYBARRIERRECTIFIER

RECTRONRECTRON LTD

瑞创深圳市瑞创科技有限公司

1N5820

SCHOTTKYBARRIERRECTIFIER

VOLTAGE:20TO40VCURRENT:3.0A FEATURES •Epitaxialconstructionforchip •Highcurrentcapability •Lowforwardvoltagedrop •Lowpowerloss,highefficiency •Highsurgecapability •Hightemperaturesolderingguaranteed: 250°C/10sec/0.375(9.5mm)leadlength at5lbstension

SSEShanghai Sunrise Electronics

Shanghai Sunrise Electronics

1N5820

3.0AmpereSchottkyBarrierRectifiers

Features •3.0ampereoperationatTA=95°C withnothermalrunaway. •Foruseinlowvoltage,highfrequencyinvertersfree wheeling,andpolarityprotectionapplications.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

1N5820

TECHNICALSPECIFICATIONSOFSCHOTTKYBARRIERRECTIFIER

DCCOMDc Components

直流元件直流元件有限公司

1N5820

3.0AMPSCHOTTKYBARRIERRECTIFIERS

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

1N5820

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to40Volts ForwardCurrent-3.0Amperes Features ●PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ●Metalsiliconjunction,majoritycarrierconduction ●Lowpowerloss,highefficiency ●Highcurrentcapability,lowforwardvoltagedrop

Good-Ark

Good-Ark

1N5820

SCHOTTKYBARRIERRECTIFIERDIODES

PRV:20-40Volts IO:3.0Ampere FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Highefficiency *Lowpowerloss *Lowcost *Lowforwardvoltagedrop *Pb/RoHSFree

EIC

EIC

1N5820

3AMPSCHOTTKYBARRIERRECTIFIER

FujiFUJI CORPORATION

株式会社FUJI

1N5820

3.0AMPSCHOTTKYBARRIERRECTIFIERS

VOLTAGERANGE20to40Volts CURRENT3.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction

BYTES

Bytes

1N5820

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to40VoltsForwardCurrent-3.0Amperes FEATURES ♦PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ♦Metalsiliconjunction,majoritycarrierconduction ♦Lowpowerloss,highefficiency ♦Highcurrentcapability,lowforwardvoltagedrop

GE

GE Industrial Company

1N5820

3.0ASCHOTTKYBARRIERRECTIFIERS

FeaturesandBenefits •GuardRingDieConstructionforTransientProtection •LowPowerLoss,HighEfficiency •HighSurgeCapability •HighCurrentCapabilityandLowForwardVoltageDrop •ForUseinLowVoltage,HighFrequencyInverters,Free Wheeling,andPolarityProtectionApplicat

DIODESDiodes Incorporated

达尔科技

1N5820

SCHOTTKYBARRIERRECTIFIER

FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Metalsliiconjunction,majoritycarrietconduction •Guardringforovercoltageprotection •Lowpowerloss,highefficiency •Highcurrentcapability,Lowforwardvoltagedrop •Highsurgecapability

CHENYIShanghai Lunsure Electronic Tech

商朗电子上海商朗电子科技有限公司

1N5820

SCHOTTKYBARRIERDIODES

ReverseVoltage20to40VForwardCurrent3.0A Feature&Dimensions *PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 *Lowpowerloss,highefficiency *Foruseinlowvoltagehighfrequencyinverters,freewheeling,andpolarityprotectionapplications *Guar

LRCLeshan Radio Co., Ltd

乐山无线电乐山无线电股份有限公司

详细参数

  • 型号:

    NRVB1N5820G

  • 制造商:

    ON Semiconductor

供应商型号品牌批号封装库存备注价格
三年内
1983
纳立只做原装正品13590203865
询价
ON
1809+
DFN-5
3675
就找我吧!--邀您体验愉快问购元件!
询价
ON
2022+
SO-8FL / DFN-5
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
ON
2021
N/A
6000
询价
onsemi(安森美)
23+
SO8FL
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
ON(安森美)
23+
NA/
8735
原厂直销,现货供应,账期支持!
询价
ON-安森美
24+25+/26+27+
DFN-5.贴片
9328
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
onsemi
24+
5-DFN(5x6)(8-SOFL)
9350
独立分销商,公司只做原装,诚心经营,免费试样正品保证
询价
ONSEMI
23/22+
NA
9000
代理渠道.实单必成
询价
ON
24+
SO-8FL / DFN-5
25000
ON全系列可订货
询价
更多NRVB1N5820G供应商 更新时间2024-5-1 11:08:00