NRVB130T3G资料datasheet下载原装现货-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
NRVB130T3G	文件：62 Kbytes Page：4 Pages	Surface Mount Schottky Power Rectifier 文件：62 Kbytes 页数：4 Pages	ONSEMI 安森美半导体	ONSEMI
NRVB130T3G	文件：100 bytes Page：1 Pages	Package：SOD-123；包装：散装类别：分立半导体产品二极管 - 整流器 - 单描述：DIODE SCHOTTKY 30V 1A SOD123	ONSEMI 安森美半导体	ONSEMI
NRVBS130T3G	文件：218.46 Kbytes Page：5 Pages	Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol 文件：218.46 Kbytes 页数：5 Pages	ONSEMI 安森美半导体	ONSEMI
NRVBS130T3G	文件：97.07 Kbytes Page：3 Pages	Surface Mount hottky Power Rectifier Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency re 文件：97.07 Kbytes 页数：3 Pages	ONSEMI 安森美半导体	ONSEMI

更多NRVB130T3G供应商更新时间2025-12-1 15:08:00