Schottky Barrier Rectifier, Trench-based

This TO−277 trench Schottky rectifier provides fast switching performance in a compact thermally efficient package. The TO−277 package provides an excellent alternative to the DPAK, offering thermal performance nearly as good in a package occupying less than half the board space. Its low profi

文件：219.06 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Schottky Barrier Rectifier, Trench-based

This TO−277 trench Schottky rectifier provides fast switching performance in a compact thermally efficient package. The TO−277 package provides an excellent alternative to the DPAK, offering thermal performance nearly as good in a package occupying less than half the board space. Its low profi

文件：219.06 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

8 A, 60 V Trench Schottky Rectifier in TO-277 package

This TO−277 trench Schottky rectifier provides fast switching\nperformance in a compact thermally efficient package. The TO−277\npackage provides an excellent alternative to the DPAK, offering\nthermal performance nearly as good in a package occupying less than\nhalf the board space. Its low profile • Low Leakage Current in High Temperature Condition\n• Preventing thermal runaway\n• Less Switching Loss for High Switching Frequency Application\n• Improved system efficiency\n• Compact Size with Good Thermal Performance\n• Reduced the land area\n• 175c Maximum Junction Temperature;

ONSEMI

安森美半导体

Package：TO-277，3-PowerDFN；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 8A 60V TO277-3

ONSEMI

安森美半导体