Gallium Nitride 28V, 5W, DC-6 GHz HEMT

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Next generation high power RF semiconductor technology

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DC-6 GHz HEMT

文件：2.27474 Mbytes 页数：10 Pages

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GaN Amplifier 28 V, 5 W, DC - 6 GHz

The NPTB00004A GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 5W (37 dBm) in an industry standard surface mount SOIC plastic package. At frequencies below 3GHz, the NPTB00004A is a dro ·Broadband Operation from DC-6 GHz\n·Drop in Replacement for NPTB00004\n·High Drain Efficiency (>55%)\n·Industry Standard Plastic Package\n·28V Operation;

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Package：8-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：HEMT N-CH 28V 5W DC-6GHZ 8SOIC

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