Gallium Nitride 28V, 18W RF Power Transistor

文件：723.58 Kbytes 页数：10 Pages

MA-COM

18W RF Power Transistor

文件：723.58 Kbytes 页数：10 Pages

MA-COM

Gallium Nitride 28V, 18W RF Power Transistor

文件：716.78 Kbytes 页数：10 Pages

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GaN Amplifier 28 V, 18 W, 3.3 - 3.8 GHz

The NPT35015 GaN HEMT is a power transistor optimized for 3.3 - 3.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 18 W. This transistor is assembled in an industry standard surface mount plastic package. ·Optimized for CW, Pulsed, WiMAX, and Other Applications from 3300 - 3800 MHz\n·Thermally Enhanced Industry Standard Package\n·100% RF tested\n·Characterized for Operation up to 32V\n·1.7W linear power @ 2% EVM for single carrier OFDM, 10.3dB peak/average, 10.3dB @ 0.01% probability on C;

MACOM

18W RF Power Transistor

文件：723.58 Kbytes 页数：10 Pages

MA-COM

Gallium Nitride 28V, 18W RF Power Transistor

For load-pull data and non-linear models, please send an e-mail to applications@macom.com ·Optimized for CW, Pulsed, WiMAX, and Other Applications from 3300 - 3800 MHz\n·Thermally Enhanced Industry Standard Package\n·100% RF tested\n·Characterized for Operation up to 32V\n·1.7W linear power @ 2% EVM for single carrier OFDM, 10.3dB peak/average, 10.3dB @ 0.01% probability on C;

MACOM

Package：8-SOIC（0.154"，3.90mm 宽）裸露焊盘；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：HEMT N-CH 28V 18W 3300-3800MHZ

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