Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT

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Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT

The NPT2010 GaN HEMT is a wideband transistor optimized for DC-2.2 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 100W (50 dBm) in an industry standard metal-ceramic package with a bolt down flange. For load-pull data and non-linear m ·Suitable for Linear and Saturated Applications\n·High Drain Efficiency (>60%)\n·Industry Standard Package\n·48V Operation\n·Tunable from DC-2.2 GHz;

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包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：HEMT N-CH 48V 100W DC-2.2GHZ

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DC-2.2 GHz HEMT

文件：2.45282 Mbytes 页数：10 Pages

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