60 V – 90 A – N-channel Power MOS FET Application: Automotive

Description NP90N06VDK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance  RDS(on)1 = 5.3 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V)  Designed for automotive application and A

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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无锡固电

N-channel Power MOS FET

文件：374.55 Kbytes 页数：9 Pages

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60 V – 90 A – N-channel Power MOS FET Application: Automotive

Description NP90N06VDK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance  RDS(on)1 = 5.3 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V)  Designed for automotive application and A

文件：442.68 Kbytes 页数：9 Pages

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60 V – 90 A – N-channel Power MOS FET Application: Automotive

Description NP90N06VDK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance  RDS(on)1 = 5.3 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V)  Designed for automotive application and A

文件：442.68 Kbytes 页数：9 Pages

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60 V – 90 A – N-channel Power MOS FET Application: Automotive

Description NP90N06VDK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance  RDS(on)1 = 5.3 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V)  Designed for automotive application and A

文件：442.68 Kbytes 页数：9 Pages

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N-channel Power MOS FET

文件：374.55 Kbytes 页数：9 Pages

RENESAS

瑞萨

N-channel Power MOS FET

文件：374.55 Kbytes 页数：9 Pages

RENESAS

瑞萨

60 V – 90 A – N-channel Power MOS FET

60 V – 90 A – N-channel Power MOS FET • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 45 A)\n• Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V)\n• Designed for automotive application and AEC-Q101 qualified;

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