首页 >NP90N03VLG>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
NP90N03VLG | N-Channel 30-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | |
NP90N03VLG | MOS FIELD EFFECT TRANSISTOR Description TheNP90N03VLGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)1=3.2mΩMAX.(VGS=10V,ID=45A) ⎯RDS(on)2=8.0mΩMAX.(VGS=4.5V,ID=35A) •Lowinputcapacitance ⎯Ciss | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
NP90N03VLG | Product Scout Automotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
N-Channel 30-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
MOS FIELD EFFECT TRANSISTOR Description TheNP90N03VLGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)1=3.2mΩMAX.(VGS=10V,ID=45A) ⎯RDS(on)2=8.0mΩMAX.(VGS=4.5V,ID=35A) •Lowinputcapacitance ⎯Ciss | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR Description TheNP90N03VLGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)1=3.2mΩMAX.(VGS=10V,ID=45A) ⎯RDS(on)2=8.0mΩMAX.(VGS=4.5V,ID=35A) •Lowinputcapacitance ⎯Ciss | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-Channel 30-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
MOS FIELD EFFECT TRANSISTOR | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-Channel30-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-channel30V-0.005廓-80A-DPAK/IPAKSTripFET??IIIPowerMOSFET Description ThisdeviceutilizesthelatestadvanceddesignrulesofST’sproprietarySTripFET™technology.ThisissuitableforthemostdemandingDC-DCconverterapplicationwherehighefficiencyistobeachieved. Generalfeatures ■RDS(on)*Qgindustry’sbenchmark ■Conductionlossesreduce | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-Channel30-V(D-S)MOSFETTrenchFETPowerMOSFET | DINTEK DinTek Semiconductor Co,.Ltd | DINTEK | ||
TrenchFET짰PowerMOSFET | DINTEK DinTek Semiconductor Co,.Ltd | DINTEK | ||
原装正品价格优惠 | ETC | |||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | GTM 勤益投資控股股份有限公司 | GTM | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | ETLE-Tech Electronics LTD 亞歷電子亞歷電子有限公司 | ETL | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | GTM 勤益投資控股股份有限公司 | GTM | ||
100AvalancheTested | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NEC |
23+ |
TO-252 |
35400 |
全新原装真实库存含13点增值税票! |
询价 | ||
Renesas |
1822+ |
TO-252 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
23+ |
N/A |
90250 |
正品授权货源可靠 |
询价 | |||
Renesas |
18+ |
TO-252 |
41200 |
原装正品,现货特价 |
询价 | ||
原厂 |
2020+ |
TO-252 |
20000 |
公司代理品牌,原装现货超低价清仓! |
询价 | ||
RENESAS/瑞萨 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
RENESAS/瑞萨 |
21+ |
TO-252 |
10000 |
原装现货假一罚十 |
询价 | ||
RENESAS/瑞萨 |
2022 |
TO-252 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
RENESAS/瑞萨 |
2022+ |
TO-252 |
5000 |
原厂代理 终端免费提供样品 |
询价 | ||
Renesas |
TO-252 |
68900 |
原包原标签100%进口原装常备现货! |
询价 |
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