NP60N04VLK

40V–60A–N-channelPowerMOSFETApplication:Automotive

Description TheNP60N04VLKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=3.9mMAX.(VGS=10V,ID=30A) LowCiss:Ciss=2450pFTYP.(VDS=25V) Logicleveldrivetype Designedfor

NP60N04VLK

N-channelPowerMOSFET

NP60N04VLK

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.9mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NP60N04VUK

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.85mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NP60N04VUK

ProductScoutAutomotive

NP60N04VUK

MOSFIELDEFFECTTRANSISTOR

Description TheNP60N04VUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=3.85mΩMAX.(VGS=10V,ID=30A) •LowCiss:Ciss=2450pFTYP.(VDS=25V) •Designedforautomotiveapplication

PJD60N04

40VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@20A

PJD60N04-AU

40VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@20A

PJD60N04S-AU

40VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@20A

PJD60N04V-AU

40VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@20A