MOSFET

Natlinear

南麟

Product Scout Automotive

文件：5.67799 Mbytes 页数：6 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 55A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.98 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’technology • Very low on-state resistance • Fast switching • Low thermal resistance • Logic level compatible Appl

文件：107.39 Kbytes 页数：11 Pages

PHI

飞利浦