MTP52N06V

TMOSPOWERFET52AMPERES60VOLTSRDS(on)=0.022OHM

TMOSV™PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesth

MTP52N06V

N?묬hannelPowerMOSFET

MTP52N06V

N-Channel60V(D-S)MOSFET

MTP52N06VL

TMOSPOWERFET52AMPERES60VOLTSRDS(on)=0.025OHM

TMOSV™PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesth

MTP52N06VL

N?묬hannelPowerMOSFET

MTP52N06VLG

N?묬hannelPowerMOSFET

PHP52N06T

N-channelTrenchMOSstandardlevelFET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits L

PHP52N06T

N-channelTrenchMOSstandardlevelFET

Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforuseincomputing,communications,consumerandindustrialapplicationsonly. Featuresandbenefits ■Lowconduc

PHP52N06T

N-channelenhancementmodefield-effecttransistor

Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingTrenchMOS™1technology. Productavailability: PHP52N06TinSOT78(TO-220AB). Features ■Lowon-stateresistance ■175°Crated. Applications ■DCtoDCconverters ■Uninterruptiblepowersup