首页 >NP36P04SLG>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP36P04KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=17.0mΩMAX.(VGS=−10V,ID=−18A) RDS(on)2=23.5mΩMAX.(VGS=−4.5V,ID=−18A) •Lowinputcapacitance | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=-36A@TC=25℃ ·DrainSourceVoltage-VDSS=-40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=-36A@TC=25℃ ·DrainSourceVoltage-VDSS=-40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
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