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NP36N055HLE

MOS FIELD EFFECT TRANSISTOR NP36N055HLE, NP36N055ILE, NP36N055SLE

SWITCHING CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffect Transistordesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=13mΩMAX.(VGS=10V,ID=18A) RDS(on)2=16

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NP36N055HLE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=36A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NP36N055IHE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=36A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=14mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NP36N055IHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=14mΩMAX.(VGS=10V,ID=18A) •LowCiss

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NP36N055ILE

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

NP36N055ILE

MOSFIELDEFFECTTRANSISTORNP36N055HLE,NP36N055ILE,NP36N055SLE

SWITCHING CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffect Transistordesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=13mΩMAX.(VGS=10V,ID=18A) RDS(on)2=16

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NP36N055ILE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=36A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NP36N055SHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=14mΩMAX.(VGS=10V,ID=18A) •LowCiss

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NP36N055SHE

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NP36N055SHE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=36A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=14mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NP36N055SLE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=36A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NP36N055SLE

MOSFIELDEFFECTTRANSISTORNP36N055HLE,NP36N055ILE,NP36N055SLE

SWITCHING CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffect Transistordesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=13mΩMAX.(VGS=10V,ID=18A) RDS(on)2=16

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NP36N055SLE

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

供应商型号品牌批号封装库存备注价格
NEC
08+(pbfree)
TO-251
8866
询价
NEC
23+
TO-251
12276
全新原装
询价
NEC
6000
面议
19
TO-251
询价
NEC
23+
TO-251
37650
全新原装真实库存含13点增值税票!
询价
NEXPERIA/安世
23+
SOT78
69820
终端可以免费供样,支持BOM配单!
询价
NEC
23+
TO-251
90000
只做原厂渠道价格优势可提供技术支持
询价
NEC
23+
TO-251
10000
公司只做原装正品
询价
NEC
22+
TO-251
6000
十年配单,只做原装
询价
NEC
23+
TO-251
6000
原装正品,支持实单
询价
NEC
22+
TO-251
25000
只做原装进口现货,专注配单
询价
更多NP36N055HLE供应商 更新时间2024-9-25 15:30:00